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CMT20N15
POWER MOSFET
GENERAL DESCRIPTION
This Power MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients. ! !
FEATURES
! ! ! Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature
PIN CONFIGURATION
TO-220
SYMBOL
D
Front View
G ATE
SO URCE
DRAIN
G
S
1 2 3
N-Channel MOSFET
ORDERING INFORMATION
Part Number CMT20N15N220 Package TO-220
ABSOLUTE MAXIMUM RATINGS
Rating Drain to Current Continuous Pulsed Gate-to-Source Voltage Continue Non-repetitive Total Power Dissipation Derate above 25 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy TJ = 25 (VDD = 100V, VGS = 10V, IL = 20A, L = 10mH, RG = 25) Thermal Resistance Junction to Case Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds JC JA TL 1.1 62.5 260 /W TJ, TSTG EAS Symbol ID IDM VGS VGSM PD Value 20 60 20 32 112 0.9 -55 to 150 60 V V W W/ mJ Unit A
2001/12/24 Preliminary Rev. 1
Champion Microelectronic Corporation
Page 1
CMT20N15
POWER MOSFET
ELECTRICAL CHARACTERISTICS
Unless otherwise specified, TJ = 25.
CMT20N15 Characteristic Drain-Source Breakdown Voltage (VGS = 0 V, ID = 250 A) Drain-Source Leakage Current (VDS = 150 V, VGS = 0 V) (VDS = 150 V, VGS = 0 V, TJ = 125) Gate-Source Leakage Current-Forward (Vgsf = 20 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = 20 V, VDS = 0 V) Gate Threshold Voltage (VDS = VGS, ID = 250 A) Static Drain-Source On-Resistance (VGS = 10 V, ID = 10A) * Drain-Source On-Voltage (VGS = 10 V) (ID = 10.0 A) Forward Transconductance (VDS = 13 V, ID = 10A) * Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 75 V, ID = 20 A, VGS = 10 V, RG = 9.1) * (VDS = 120 V, ID = 20 A, VGS = 10 V)* Symbol V(BR)DSS IDSS 10 100 IGSSF IGSSR VGS(th) RDS(on) VDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS 8.0 11 1133 332 105 11 77 33 49 39.1 7.5 22 4.5 7.5 1627 474 174 25 153 67 97 55.9 2.0 0.12 100 100 4.0 0.13 2.8 nA nA V V mhos pF pF pF ns ns ns ns nC nC nC nH nH Min 150 Typ Max Units V A
Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25" from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 20 A, VGS = 0 V, dIS/dt = 100A/s)
VSD ton trr ** 160
1.5
V ns ns
* Pulse Test: Pulse Width 300s, Duty Cycle 2% ** Negligible, Dominated by circuit inductance
2001/12/24 Preliminary Rev. 1
Champion Microelectronic Corporation
Page 2
CMT20N15
POWER MOSFET
PACKAGE DIMENSION
TO-220
B F
C S
PIN 1: GATE PIN 2: DRAIN PIN 3: SOURCE
Q
A
U
T
A B
1
Z H
2
3
C D F G H J K L N Q R S T U
G L V N D
R J
V Z
2001/12/24 Preliminary Rev. 1
Champion Microelectronic Corporation
Page 3
CERAMIC/SURGE ABSORBER SHANGHAI,CHINA
DIODES LAB HANGZHOU,CHINA
CERAMIC/PZT SHINCHU,TAIWAN
DC POWER LAB TAIPEI,TAIWAN

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